Nano-TCAD News
Leo defends his PhD!
Congratulations to Leonard Deuschle for defending his PhD work, titled "Electron-Electron Interactions in Device Simulation via Non-equilibrium Green’s Functions and the GW Approximation". Have fun at NVIDIA Leo!
Paper accepted at DRC 2025!
Our work simulating failure mechanisms in ultrascaled resistive memory crossbar arrays has been accepted as an oral presentation at the Device Research Conference (DRC), where it has been nominated for Best Student Presentation!
A collaboration with researchers at UT Austin, now published in Nature Materials!
By sandwiching a semiconducting or insulating layer between two metallic electrodes and applying an electric field, its resistance can be changed by factors sometimes larger than 1000. A reverse electric field then brings it back to its original value. This property has been likened to dielectric breakdown, and used to make electronic memory devices.
Teaching Digital Electronics at Ashesi University
Cindy Karina and Manasa Kaniselvan from the Nano-TCAD group were co-lecturers for the first-year Digital Electronics block course, which is part of Ashesi University’s (in Ghana) new collaborative degree program with ETH. Teaching such highly engaged and driven students was truly a lot of fun!
Papers at Memrysis 2024
Kevin Porter and Till Zellweger shared their work on memristive devices last week at the Memrysis conference in Seoul, South Korea.