Ultraprecise simulation of a computer storage technology known as CBRAM reveals its optimal geometry: an insulator roughly ten atoms thick sandwiched between two electrodes. CBRAM (conductive bridging random access memory) could play a fundamental role in memory in the future by storing data in a non-volatile (i.e., near-permanent) way. Prof. Mathieu Luisier and his team studied this type of memory, which consists of two metal electrodes separated by an insulator.