Prof. Mathieu Luisier reveals simulation of the ideal size of future computer memories
Ultraprecise simulation of a computer storage technology known as CBRAM reveals its optimal geometry: an insulator roughly ten atoms thick sandwiched between two electrodes. CBRAM (conductive bridging random access memory) could play a fundamental role in memory in the future by storing data in a non-volatile (i.e., near-permanent) way. Prof. Mathieu Luisier and his team studied this type of memory, which consists of two metal electrodes separated by an insulator.
The researchers developed a computer model of a CBRAM that consists of some 4500 atoms and obeys the laws of quantum mechanics governing the microscopic world. This atomic-scale simulation makes it possible to precisely describe the intensity of the current generated by a metallic nanofilament as it forms and dissolves between the electrodes.
The findings of their research were presented at the IEDM conference in San Francisco in December 2017.
Find the visualization here.
The conference procedding from IEDM can be found external page here.
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